1: General Subjects. - Neutron Doped Silicon A Market Review (Invited). - Large Scale Production of NTD-Silicon in The United States (Invited). - 2: Radiation Defects. - Impact of Defects Formed in Neutron Transmutation Doping of Silicon on Device Performance (Invited). - Electrical Property Studies of Oxygen in Czochralski-Grown Neutron-Transmutation-Doped Silicon (Invited). - Impurity Interactions with Structural Defects in Irradiated Silicon (Invited). - Defect Production During Neutron Doping of Si (Invited). - Wafer Stability. A Comparison of NTD-Silicon with Conventional FZ. - Electron Spin Resonance (ESR) Study on The Thermal Annealing of Defects Induced in Neutron Transmutation Doped Silicon. - Optical Studies of Lattice Damage in Neutron-Transmutation-Doped Silicon. - A Facility and Program at IPNS to Study Defects Produced by Fast Neutrons in Semiconductors. - Defects in Neutron-Irradiated Extrinsic P-Type Silicon. - 3. Irradiation Technology. - The Health and Safety Aspects of Neutron Doped Silicon (Invited). - Precision and Accuracy of NTD Silicon Production Based on Calorimetric Neutron Dose Control. - The Selection of Starting Material for Neutron-Transmutation Doped Silicon. - The Optimisation of Nuclear Parameters used for Silicon Irradiation in the Harwell Research Reactors. - Factors Affecting Phosphorus Production Rate in NTD Silicon. - Neutron Doped Silicon in Grenoble Reactor Facilities. - Characterization of NTD Silicon Irradiated in Grenoble Reactor Facilities. - A Preliminary Study on NTD-Silicon. - Development of the Irradiation Facilities for Silicon Neutron Doping in France. - Neutron Transmutation Doping of Silicon Slices. - 4. Device Design. - Characterization of Unijunction Transistors Fabricated on NTD-Silicon (Invited). - NTD Silicon Behaviour During DiffusionHeat Treatment and High Power Devices Optimization (Invited). - An Optimization of Blocking Characteristics of High Voltage Thyristors using NTD Crystal. - The Fabrication and Characterization of Spreading Resistance Temperature Sensors using NTD Silicon (Invited). - 5. Characterization. - Characterization of NTD Silicon Crystals by The Photoluminescence Technique (Invited). - Precision Resistivity Measurements on NTD-Silicon. - Photoluminescence Analysis of NTD-Silicon. - Quantitative Determination of B and P In Silicon by IR Spectroscopy. - 6. Special Topics. - Extrinsic NTD Silicon for Infrared Applications (Invited). - Impurity Doping and Isolation Processing by High Energy Electron Beam (Invited). - Application of NTD Silicon for Radiation Detector of Surface Barrier Type. - Neutron Transmutation Doping of GaAs. - Participants. Language: English