1 Introduction. - 2 SOI Materials. - 2. 1 Introduction. - 2. 2 Heteroepitaxial techniques. - 2. 3 Dielectric Isolation (DI). - 2. 4 Polysilicon melting and recrystallization. - 2. 5 Homoepitaxial techniques. - 2. 6 FIPOS. - 2. 7 Ion beam synthesis of a buried insulator. - 2. 8 Wafer Bonding and Etch Back (BESOI). - 2. 9 Layer transfer techniques. - 2. 10 Strained silicon on insulator (SSOI). - 2. 11 Silicon on diamond. - 2. 12 Silicon-on-nothing (SON). - 3 SOI Materials Characterization. - 3. 1 Introduction. - 3. 2 Film thickness measurement. - 3. 3 Crystal quality. - 3. 4 Carrier lifetime. - 3. 5 Silicon/Insulator interfaces. - 4 SOI CMOS Technology. - 4. 1 SOI CMOS processing. - 4. 2 Field isolation. - 4. 3 Channel doping profile. - 4. 4 Source and drain engineering. - 4. 5 Gate stack. - 4. 6 SOI MOSFET layout. - 4. 7 SOI-bulk CMOS design comparison. - 4. 8 ESD protection. - 5 The SOI MOSFET. - 5. 1 Capacitances. - 5. 2 Fully and partially depleted devices. - 5. 3 Threshold voltage. - 5. 4 Current-voltage characteristics. - 5. 5 Transconductance. - 5. 6 Basic parameter extraction. - 5. 7 Subthreshold slope. - 5. 8 Ultra-thin SOI MOSFETs. - 5. 9 Impact ionization and high-field effects. - 5. 10 Floating-body and parasitic BJT effects. - 5. 11 Self heating. - 5. 12 Accumulation-mode MOSFET. - 5. 13 Unified body-effect representation. - 5. 14 RF MOSFETs. - 5. 15 CAD models for SOI MOSFETs. - 6 Other SOI Devices. - 6. 1 Multiple-gate SOI MOSFETs. - 6. 2 MTCMOS/DTMOS. - 6. 3 High-voltage devices. - 6. 4 Junction Field-Effect Transistor. - 6. 5 Lubistor. - 6. 6 Bipolar junction transistors. - 6. 7 Photodiodes. - 6. 8 G4 FET. - 6. 9 Quantum-effect devices. - 7 The SOI MOSFET in a Harsh Environment. - 7. 1 Ionizing radiations. - 7. 2 High-temperature operation. - 8 SOI Circuits. - 8. 1 Introduction. - 8. 2 Mainstream CMOS applications. - 8. 3 Niche applications. - 8. 4 Three-dimensional integration. Language: English